Effect of Molybdenum Doping and Annealing on Photoluminescence of Sputtering-Derived Zinc Oxide Films

Shiwei Shi,Junlei Li,Xian Wang,Zhaoqi Sun,Xishun Jiang,Jingbiao Cui,Xiaoshuang Chen

DOI: https://doi.org/10.1142/s1793604713500240

IF: 1.4901

2013-01-01

Functional Materials Letters

Abstract:The molybdenum-doped ZnO (MZO) films were deposited on quartz substrates by radio frequency magnetron sputtering. All films have a polycrystalline hexagonal wurtzite structure. Mo doping influences the grain size of the MZO films and leads to a compressive stress in the films. The valence of Mo in the MZO films is hexavalence. Mo doping enhances the emissions at 380 and 412 nm. Annealing significantly influences the photoluminescence (PL) spectra of the MZO films. The PL spectral intensity of the annealed films is much higher than that of the unannealed films. The emissions at 400 and 525 nm enhanced dramatically with the rising of annealing temperature while the emissions at 380 and 412 nm became weak or disappeared. Mo doping is beneficial for the enhancement of the emissions at 400 and 525 nm of the annealed MZO films. The origins of these emissions were discussed in detail.