Abstract:High quality ZnO thin films have been grown on Si (100) substrates with MgO buffer layers. An electron beam evaporation technique was used to grow MgO buffer layer on Si substrates followed by a magnetron sputtering process to deposit Zn films on the MgO-buffered Si substrates, next, a two-step annealing process was employed to oxidize the Zn films to form ZnO. The effects of the annealing temperature on the photoluminescence (PL) and orientation of ZnO nanocrystalline thin films were studied. For ZnO films annealed between 400°C and 700°C in an O2 ambient, the quality of the ZnO films was improved with increasing annealing temperature. However, as the annealing temperature was increased to over 800°C, the ZnO film underwent a phase transformation from ZnO to a MgxZn1−xO alloy, where the x value in the alloy increased with increasing annealing temperature. The MgxZn1−xO alloy films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and reflection spectra. XRD results show that the MgxZn1−xO alloy films maintain the hexagonal structure with a lattice constant close to that of ZnO. In films with Mg incorporation, intense ultraviolet band edge photoluminescence was observed at room temperature. The photoluminescence (PL) spectra show that MgxZn1−xO alloy has a wide band gap with a large exciton binding energy of 53meV. The band gap of the MgxZn1−xO alloy shifts to higher energy with increasing annealing temperature. The blue-shift of the fundamental band gap of the alloy annealed at 1000°C is estimated to be ∼300meV.

Influence of Fabrication Technique on Structure and Photoluminescence of Zn1-xMgxO Thin Films

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effect of Annealing and Mg Content on the Microstructure and Optical Properties of Zn1-xMgxO Films

Photoluminescence and structure properties of Zn1?xMgxO films grown by RF magnetron sputtering

The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

Photoluminescence Characteristics of Zn1-xMgxO Films

Effect of Annealing Atmosphere on Structure and Photoluminescence of ZnMgO Thin Films

Photoluminescence and structure properties of Zn<sub>1−<i>x</i></sub>Mg<sub><i>x</i></sub>O films grown by RF magnetron sputtering

Effects of Thermal Treatment on the Properties of ZnO Films Deposited on MgO-buffered Si Substrates

Effect of annealing on optical properties of Mg(x)Zn(1-x)Othin films deposited at low temperature

Structure and luminescent properties of ZnO thin films

Structural, Electrical And Optical Properties Of Zn1-Xmgxo Films Prepared By Reactive Dc Sputtering

Influence of fabrication technique on structure and optical properties of ZnO thin films

Annealing Effect on the Microstructure and Photoluminescence of ZnO Thin Films

Influence of Substrate Temperature on the Structure and Photoluminescence of Mg(0.05)Zn(0.95)Othin Films Grown by Pulsed Laser Deposition

Structural and Photoluminesenct Properties of Zn1-xMgxO Thin Film on Silicon

Effect of Anneal on the Properties of Mgxzn1-Xo Thin Films Deposited by Metal-Organic Chemical Vapor Deposition

Effect of Annealing Temperature on the Structural and Optical Properties of Zn1−xMgxO Particles Prepared by Oxalate Precursor