Photoluminescence and structure properties of Zn1?xMgxO films grown by RF magnetron sputtering

Xiaoliang Xu,Liu Lu,Ye Wang,Chaoshu Shi

DOI: https://doi.org/10.1088/0953-8984/18/4/007

2006-01-01

Abstract:A number of Zn1−xMgxO (x = 0–0.16) films on Si(100) substrates were prepared by RF magnetron sputtering and annealed at different temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) spectra indicate that the crystal structure of the films for x>0 is the same as that of the hexagonal microcrystal ZnO. UV emission peaks for free excitons (and assisted phonon replicas) and electron–hole plasma (E–H) are found in the photoluminescence from the films, where the E–H has a superlinear five-times-enhanced lasing effect. The blue shift of the UV peaks in the photoluminescence spectra is found to be associated with increasing Mg content in the Zn1−xMgxO films, and the peak intensity is also reinforced significantly as the annealing temperature is increased. The green emission due to the oxygen vacancy was very weak, indicating that a good stoichiometry was maintained in the films. The minimum lasing threshold of the samples is 35 kW cm−2, corresponding to ~100 nm hexagonal microstructure.