Structure and luminescent properties of ZnO thin films

Xinman Chen,KaiBin Ruan,Tong Liang,Guangheng Wu,Dinghua Bao

2008-01-01

Abstract:Polycrystalline ZnO thin films were fabricated on silicon substrates by Sol-Gel method using Zn (CH 3CO 2) 2·2H 2O as raw material, and the annealing effects on crystallization, microstructure and luminescent properties of ZnO thin films were investigated. With increasing annealing temperature, enhancement of crystallinity of hexagonal ZnO thin films was confirmed by X-ray diffraction, the calculated c axis of ZnO thin films was reduced and the transformation of in-plane stress of films from the compressive to the tensile at about 620°C was identified. The photoluminescence spectra were obtained at room temperature. Intensive near-band-edge emission (-390 nm) with redshifts with increasing annealing temperature was considered from the contribution of both enhanced crystal linity and in-plane stress of ZnO thin films. The green emission boosted up when annealing temperature was above 750°C, which could be attributed to the presence of oxygen vacancies in the ZnO thin films.