Abstract:ZnO thin films with a strong c-axis orientation have been successfully deposited on Si substrate at room temperature (RT) by using JPGF-450 r. f. magnetron sputtering system. A sintered ceramic ZnO target with 99.99% purity was used as source material. A mixture of Ar (99.999%) and O 2 (99.999%) were used as sputtering gases. The argon and oxygen were introduced via two separately controlled leak valves so that the partial pressure could be adjusted. During film deposition, the argon partial pressure maintained at 1Pa, and the oxygen partial pressure maintained at 0, 2 and 5.2Pa respectively for different samples. The sputtering r. f. power was 200W and sputtering time was 20 minutes. The ZnO films were grown with argon partial pressure of 1Pa and oxygen partial pressure of 0, 2 and 5.2Pa, respectively. The XRD spectra revealed that all samples were polycrystalline and had a preferred orientation with c-axis perpendicular to the substrates. All samples show typical luminescence behavior with a narrow 446nm (2.78eV) emission peak when excited with 300nm light. The intensity of the PL peaks is found to be strongly dependent on the oxygen pressure during films deposition. As the oxygen partial pressure increase, the PL intensity decreases quickly. The blue emission is also affected by annealing in different ambient. For the vacuum annealed sample, the intensity of PL increases markedly. On the contrary, for the samples annealed in oxygen, the PL intensity decreases. The experiments prove that the luminescence emission peak located at 446nm corresponds to the electron transition from the shallow level of oxygen vacancy to valence band.

Photoluminescence of ZnO Films Prepared by R.f. Sputtering on Different Substrates

Influence of Substrates on Photoluminescence for Zno Films Prepared by R. F. Sputtering

The blue photoluminescence emitted from ZnO films deposited on glass substrate by rf magnetron sputtering

Photoluminescence of ZnO Films Excited with Light of Different Wavelength

Photoluminescence of ZnO Films Deposited on Si Substrate by RF Magnetron Sputtering

Ultra Violet Photoluminescenc of Zno Films on Different Substrates

Luminescence Properties of ZnO Films Prepared by R. F. Magnetron Sputtering

Photoluminescence of ZnO Films Prepared by Sputtering

Influence of Excitation Light Wavelength on the Photoluminescence Properties for Zno Films Prepared by Magnetron Sputtering

Violet Luminescence Emitted from ZnO Films Deposited on Si Substrate by Rf Magnetron Sputtering

Violet and Blue Photoluminescence Emitted from Zno Films Deposited by R. F. Magnetron Sputtering

Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate temperature

Influence of Preparation Methods on Photoluminescence Properties of ZnO Films on Quartz Glass

Blue luminescent center in ZnO films deposited on silicon substrates

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

The Mechanisms of Blue Emission from ZnO Films Deposited on Glass Substrate by R.f. Magnetron Sputtering

Mechanisms of Green Emission from ZnO Films Prepared by Rf Magnetron Sputtering

Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

Single Violet Luminescence Emitted from Zno Films Obtained by Oxidation of Zn Film on Quartz Glass

The Effect of O-2 Partial Pressure on the Photoluminescence of Zno Thin Films Grown by Pulsed Laser Deposition

Photoluminescent Properties of ZnO Films Deposited on Si Substrates