Abstract:In this article, the influence of the duration of high-temperature ( T = 800 °C) annealing on the transformation of the defective structure and the morphology of thin films from arrays of ZnO nanocrystals synthesized by high-frequency magnetron sputtering was studied using the methods of photoluminescence and atomic force microscopy. On the basis of atomic force microscopy measurements, it was established that ZnO films consist of densely packed grains ranging in size from 40.5 to 49.1 nm An increase in grain size to statistically significant values over 80 nm is observed as a result of annealing for 60 min. The influence of the high-temperature annealing duration on the transformation of PL spectra of exciton and defects bands and, accordingly, the defect structure of the nanocrystalline ZnO films was determined. In the PL spectra of ZnO nanocrystals, the lines of bound excitons (378 nm, 388 nm) are clearly distinguished in the ultraviolet region. In the visible region, the weak band at 468 nm and fairly intense bands at 559 nm and 683 nm appear, which are characteristic for nanostructured ZnO films obtained by magnetron sputtering. The nature of the specified PL bands is discussed. Differences in the dependence of the intensity of individual PL bands on the duration of annealing are explained by the competition of the recombination mechanisms on non-radiative (Zn i ) and radiative (O Zn , V Zn – V O , V Zn –2 V O ) defect centers.

Influence of Excitation Light Wavelength on the Photoluminescence Properties for Zno Films Prepared by Magnetron Sputtering

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Violet Luminescence Emitted from ZnO Films Deposited on Si Substrate by Rf Magnetron Sputtering

Excitation Wavelength Dependence Of The Visible Photoluminescence From Amorphous Zno Granular Films

Influences of Substrate and Annealing on the Structural and Optical Properties and Photoluminescence of Nanocrystalline Zno Films Prepared by Plasma Assisted Pulsed Laser Deposition

Relationship between photoluminescence and structural properties of the sputtered Zn1-xCdxO films on Si substrates

Affect of film thickness on the blue photoluminescence from ZnO

Electrophotoluminescence of Zno Film

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Excitation-intensity and Temperature Dependences of Photoluminescence in ZnMgO Film

Electrophotoluminescence of Sol-Gel Derived Zno Film: Effect of Electric Field on Near-Band-Edge Photoluminescence

COMPARISON OF ULTRAVIOLET PHOTOLUMINESCENCE CHARACTERISTICS BETWEEN MgZnO AND ZnO THIN FILMS

Influence of Substrates in ZnO Devices on the Surface Plasmon Enhanced Light Emission

Raman and Photoluminescence of Zno Films Deposited on Si(111) Using Low-Pressure Metalorganic Chemical Vapor Deposition

Photoluminescence spectra of nanocrystalline ZnO films obtained by magnetron deposition technique

Optical properties of Mg x Zn 1−x O thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

Luminescent Properties of (004) Highly Oriented Cubic Zinc Blende ZnO Thin Films

Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

Deep ultraviolet emission of ZnO films prepared by RF magnetron sputtering at changing substrate temperature