Abstract:Owing to its merits of high corrosion resistance,high temperature stability as well as good mechanical strength etc.,silicon n itride membrane (SiN) has been widely used as the experimental carrier of transm ission electron microscope (TEM),scanning electron microscopy (SEM),atomic for ce microscope (AFM),X-ray photoelectron spectroscopy (XPS),energy dispersive X-Ray spectroscopy (EDX) and other characterization.In particular,SiN can be used as a low disturbing background for SEM observation.However,the poor lumin escent property of SiN thin film has restricted its wide application in fluoresc ent devices.In order to enhance the fluorescence efficiency of silicon nitride membrane,a series of ZnO films were prepared on a SiNx film substrate wit h radio frequency magnetron sputtering (RF magnetron sputtering) technology duri ng the experiment.Samples were then non-situ and in-situ annealed in nitrogen atmosphere,respectively.Then,atomic force microscope (AFM),scanning electro n microscopy (SEM) and Raman spectroscopy (Raman) were applied to study the micr ostructure and photoluminescence (PL) properties of the prepared films.This pap er also systemically studies the luminescence of the prepared thin films.The re sults show that,luminescent intensity increases after sputtering,while anneali ng further promoted the grain growth,a substantial increase in crystallization behavior and a decrease in grain boundary.The microstructure and luminescence p roperties of ZnO/SiN thin films prepared by RF magnetron sputtering were signifi cantly influenced by annealing method.Compared with the SiNx film,near the ban d edge of the intrinsic emission intensity (about 380 nm) of untempered ZnO/SiN x films and N2 atmosphere ex-situ annealed ZnO/SiNx films were in creased by more than 7.7 times and 34.0 times.Compared with non-situ anneale d films,in-situ annealed films contained more oxygen vacancy defects,thus sho wing a stronger visible light PL intensity.In-situ annealed films exhibited a higher photoluminescence capacity during the wavelength from 425to 600 nm of v isible light.These results can help to optimize the preparation parameters of s ilicon nitride based ZnO fluorescent films.

Photoluminescent Properties of ZnO Films Deposited on Si Substrates

Photoluminescence Property of ZnO–SiO2composites Synthesized by Sol–gel Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Violet Luminescence Emitted from ZnO Films Deposited on Si Substrate by Rf Magnetron Sputtering

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Relationship between photoluminescence and structural properties of the sputtered Zn1-xCdxO films on Si substrates

Photoluminescence Spectra of Nano-Structured ZnO Thin Films

Preparation and the Photoelectric Properties of ZnO-SiO2 Films with a Sol–Gel Method Combined with Spin-Coating

Influence of Substrates in ZnO Devices on the Surface Plasmon Enhanced Light Emission

Structural Characterization and Photoluminescent Properties of Zn1-Xmgxo Films on Silicon

Photoluminescence Study of Sb-doped P-Type ZnO Films by Molecular-Beam Epitaxy

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Raman and Photoluminescence of Zno Films Deposited on Si(111) Using Low-Pressure Metalorganic Chemical Vapor Deposition

Electroluminescence of SnO2∕p-Si heterojunction

Time-resolved Photoluminescence Study of a ZnO Thin Film Grown on a (100) Silicon Substrate

Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

ZnO:Eu thin-films: Sol–gel derivation and strong photoluminescence from 5D0→7F0 transition of Eu3+ ions

Structural Characterization and Photoluminescent Properties of Zn 1- X Mg X O Films on Silicon

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Photoluminescence of Silicon Nitride-Based ZnO Thin Film Developed with RF Magnetron Sputtering