Photoluminescence of ZnO Films Prepared by Sputtering

王卿璞,马洪磊,张兴华,张锡健
DOI: https://doi.org/10.3969/j.issn.1671-9352.2004.02.013
2004-01-01
Abstract:Highly orientated polycrystalline ZnO films with hexagonal structure have been successfully deposited on Si substrate at room temperature (RT) by sputtering system. The XRD spectra revealed that all samples were polycrystalline and had a preferred orientation with c-axis perpendicular to the substrates. Strong monochromatic green emission located at 514?nm has been observed when excited with 320?nm light at room temperature (RT). The green emission intensity decreases quickly with increasing oxygen pressure during film deposition and it increases markedly by thermal annealing in vacuum. On the contrary,for the samples annealed in oxygen,the PL intensity decreases. The green emission may correspond to the electron transition from deep oxygen vacancy level to the valance band.
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