Abstract:Various methods of generating high stress in thin plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) films are reported. Besides the mainstream variation of plasma power and other process parameters, novel techniques such as creation of high density layers in multilayer PECVD structures or exposure of SiN films to ultraviolet radiation are shown to increase intrinsic film stress. Thin PECVD SiN films have been analyzed by a variety of analytical techniques including Fourier transform infrared spectroscopy, x-ray reflectivity (XRR), time of flight secondary ion mass spectrometry, and transmission electron microscopy to collect data on bonding, density, chemical composition, and film thickness. The level of bonded hydrogen as well as film density has been found to correlate with film stress. Creation of multilayer structures and high density layers help to build up more stress compared to a standard single layer film deposition. Both the density and number of layers in a film, characterized by XRR, affect the stress. Higher density layers affect diffusion profiles and show impurity oscillations corresponding to a multilayer film structure. Ultraviolet cure allows the film to achieve higher level of tensile stress at relatively low temperatures (400–500°C), comparable to the result of film high temperature annealing.

Structural Effect on Intrinsic Stress in Nanocrystalline Si:H Films

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Residual Stress in Amorphous and Nanocrystalline Si Films Prepared by PECVD with Hydrogen Dilution

Modification of the phonon thermal conductivity in spatially confined semiconductor nanofilms under stress fields

Stress field effects on phonon properties in spatially confined semiconductor nanostructures

Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films.

Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films

Effect of Substrate Constraint on Stress-Induced Cracking of Sputtered Tungsten Thin Film

Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Intrinsic Stress Analysis of Sputtered Carbon Film

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Influences Of Process Parameters Of Low Frequency Pecvd Technology On Intrinsic Stress Of Silicon Nitride Thin Film

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Experimental Study of the Internal Stress of Silicon Nitride Films Deposited by PECVD

Influence of film thickness on intrinsic growth stress and Raman evaluation of tetrahedral amorphous carbon films

Modifying Residual Stress and Stress Gradient in LPCVD SI3N 4 Film with Ion Implantation

Spectroscopic Analysis of Film Stress Mechanism in PECVD Silicon Nitride

Polarized Raman Spectroscopy Clarifies the Effect of Crystal Anisotropy on Elastic Stress Fields Developed on the Surface of Silicon Single‐crystal

&Lt;title>study on the Stress of Silicon Nitride Thin Films Prepared by PECVD</title>