Abstract:Ion beam-assisted deposition (IBAD) has been proposed as a promising texturing technology that uses the film epitaxy method to obtain biaxial texture on a non-textured metal or compound substrate. Magnesium oxide (MgO) is the most well explored texturing material. In order to obtain the optimal biaxial texture, the actual thickness of the IBAD-MgO film must be controlled within 12nm. Due to the bombardment of ion beams, IBAD-MgO has large lattice deformation, poor texture, and many defects in the films. In this work, the solution deposition planarization (SDP) method was used to deposit oxide amorphous Y2O3 films on the surface of Hastelloy C276 tapes instead of the electrochemical polishing, sputtering-Al2O3 and sputtering-Y2O3 in the commercialized buffer layer. An additional homogeneous epitaxy MgO (epi-MgO) layer, which was used to improve the biaxial texture in the IBAD-MgO layer, was deposited on the IBAD-MgO layer by electron-beam evaporation. The effects of growth temperature, film thickness, deposition rate, and oxygen pressure on the texture and morphology of the epi-MgO film were systematically studied. The best full width at half maximum (FWHM) values were 2.2° for the out-of-plane texture and 4.8° for the in-plane texture for epi-MgO films, respectively. Subsequently, the LaMnO3 cap layer and YBa2Cu3O7-x (YBCO) functional layer were deposited on the epi-MgO layer to test the quality of the MgO layer. Finally, the critical current density of the YBCO films was 6 MA/cm2 (77 K, 500 nm, self-field), indicating that this research provides a high-quality MgO substrate for the YBCO layer.

Growth Mechanism of IBAD-YSZ Thin Film on Hastelloy Substrates

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

RECENT PROGRESS IN COATED CONDUCTORS BY IBAD METHOD AND THE PREPARATION OF LONG YSZ/HASTELLOY SUBSTRATES

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Deposition and Characterization of YSZ Thin Films by Aerosol-Assisted CVD

Surface Morphology Evolution of CeO2/YSZ (001) Buffer Layers Fabricated Via Magnetron Sputtering

Yttria-stabilized zirconia: a suitable substrate for c-axis preferred Nd–Fe–B thin films fabricated by pulsed–laser deposition

Preparation of epitaxial yttria-stabilized zirconia with non-quilibrium t' phase and ferroelastic domain by pulsed laser deposition

A BILAYER BUFFER USING 214T Eu2CuO4 AND CUBIC YSZ FOR GROWING YBa2Cu3Oy THIN FILMS ON Si

Preparation of MgO Self-Epitaxial Films for YBCO High-Temperature Coated Conductors

Epitaxial growth of Gd 2 Zr 2 O 7 /Y 2 O 3 buffer layers for YBa 2 Cu 3 O 7− δ coated conductors

Epitaxial Growth of YBa2Cu3O7−x Films on Ce0.9La0.1O2−y Buffered Yttria-Stabilized Zirconia Substrates by an All-Chemical-solution Route

Preparation of Yttria stabilized Zirconia (YSZ) film by electrophoretic deposition (EPD) method

A Method to Fabricate Biaxially Textured MgO Buffer Layer for HTS Coated Conductor

Interfacial Stability between High-Entropy (La0.2Yb0.2Sm0.2Eu0.2Gd0.2)2Zr2O7 and Yttria-Stabilized Zirconia for Advanced Thermal Barrier Coating Applications

Growth parameters of Bi0.1Y2.9Fe5O12 thin films for high frequency applications

Insitu Fabrication Of Ybco/Ysz/Si Thin-Films By Laser Ablation

From zirconia to yttria: Sampling the YSZ phase diagram using sputter-deposited thin films