Abstract:Yttria-stabilized zirconia (YSZ) thin films on polycrystalline substrates were grown by cold-wall aerosol-assisted metallorganic chemical vapor deposition (MOCVD) at the temperatures of 673-1233 K using metal beta-diketonate chelates as precursors. Thin uniform films with amorphous structure were obtained below 673 K; when the deposition temperature increases to 773-1023 K, YSZ films appear to be a mixture of cubic and monoclinic phases; single cubic YSZ phase can be obtained at deposition temperature above 1023 K. The Y/Zr atom ratio estimated from the corresponding X-ray photoelectron spectroscopy peaks is less than the feed ratio, which can be interpreted by different transfer resistance of Y and Zr intermediates diffusing to the substrate surface. The films obtained at 673-1023 K possess a layer structure originated from low mobility of the absorbed species. Along with the increase of the deposition temperature, the grains become mature and larger, and then unite with each other to form a continuous columnar film. Mass transport dominates the growth process within lower temperatures, and homogeneous reaction will interrupt the growth at increasingly high temperatures. Growth rate expression with respect to temperature, pressure, gas flow rate, and metal concentration of precursor solutions was deduced assuming deposition of mass-transport limited mechanism, which is consistent with the experimental results. (c) 2005 The Electrochemical Society. All rights reserved.

Epitaxial Growth of YBa2Cu3O7−x Films on Ce0.9La0.1O2−y Buffered Yttria-Stabilized Zirconia Substrates by an All-Chemical-solution Route

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Epitaxial growth of YBCO thin films on LaAlO3 substrate with CeO2 buffer layer

Epitaxial Growth of YBa2Cu3O7/CeO2/YSZ Thin Films on Silicon-on-insulator Substrates

Superconducting Characteristics and Epitaxial-Growth Analyses of YBa2Cu3O7−x Thin Films by Direct-Current Magnetron Sputtering

Highly heteroepitaxial thin films of YBa2Cu3Oy grown on silicon with Eu2CuO4/Y-ZrO2 bi-layer buffer

Surface characterization of as-grown CeO2 cap layer morphology evolution and critical current density of post-deposited YBCO films

High Tc Superconducting HgBa2CaCu2Oy Films Growth on the YZrO2 Substrates with YBa2Cu3O7 Buffer Layers

A BILAYER BUFFER USING 214T Eu2CuO4 AND CUBIC YSZ FOR GROWING YBa2Cu3Oy THIN FILMS ON Si

Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates

SUPERCONDUCTIVITY AND CRYSTALLINITY IN EPITAXIAL THIN FILMS OF YBa2Cu3Oy GROWN ON Eu2CuO4/YSZ DOUBLE BUFFERED SILICON

Epitaxial growth of Gd 2 Zr 2 O 7 /Y 2 O 3 buffer layers for YBa 2 Cu 3 O 7− δ coated conductors

SUPERCONDUCTIVITY AND CRYSTALLINITY IN EPITAXIAL THIN FILMS OF <font>YBa</font><sub>2</sub><font>Cu</font><sub>3</sub><font>O</font><sub>y</sub> GROWN ON <font>Eu</font><sub>2</sub><font>CuO</font><sub>4</sub>/<font>YSZ</font> DOUBLE BUFFERED SILICON

YBa2Cu3O7−y and YbBa2Cu3O7−y Superconducting Films Prepared by Chemical Solution Deposition on SrTiO3 (001) Substrate

Growth of HgBa2CaCu2Oy films with a buffer layer

TEM STUDY OF THE MICROSTRUCTURE AND INTERFACES IN YBa2Cu3Oy THIN FILMS GROWN ON SILICON WITH A Eu2CuO4/Y-ZrO2 BI-LAYER BUFFER

A BILAYER BUFFER USING 214T <font>Eu</font><sub>2</sub><font>CuO</font><sub>4</sub> AND CUBIC YSZ FOR GROWING <font>YBa</font><sub>2</sub><font>Cu</font><sub>3</sub><font>O</font><sub>y</sub> THIN FILMS ON <font>Si</font>