Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering
Azadeh Jafari,Z. Ghoranneviss,A. Salar Elahi,M. Ghoranneviss,N. Fasihi Yazdi,A. Rezaei
DOI: https://doi.org/10.1155/2014/373847
IF: 2.1
2014-01-01
Advances in Mechanical Engineering
Abstract:We have reviewed the deposition of titanium nitride (TiN) thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD), atomic force microscope (AFM), field emission scanning electron microscopy (FESEM), and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.
engineering, mechanical,thermodynamics