The Characterization of Crystalline Particle Growth in Tini Thin Films

YH Li,FL Meng,JK Wang,YM Wang
DOI: https://doi.org/10.1107/s0021889804022332
IF: 4.868
2004-01-01
Journal of Applied Crystallography
Abstract:Small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) have been used to investigate sputter-deposited TiNi films annealed at 773 K for 3, 8, 13, 15, 25 and 60 min. The specific interfacial area of the crystalline–amorphous two-phase system increases at the beginning of annealing, achieves a maximum after about 13 min and decreases on further annealing, whereas the radius of gyration of the crystalline particle increases during the annealing process. The prominent increase of the specific interfacial area and the slight increase of the radius of gyration of the crystalline particle at the beginning of annealing are correlated with the nucleation of the crystalline particle. The subsequent decrease of the specific interfacial area is correlated with the growth of the crystalline particles.
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