Abstract:Quaternary III-V compound InAlGaP, especially In-0.5(AlxGa1-x)(0.5)P which is lattice matched with GaAs, are important materials for visible red-green light emitting diode (LED) and laser diode (LD), solar cell and other optoelectronic and electronic device applications. A set of In-0.5(AlxGa1-x)(0.5)P thin films on GaAs substrates with a wide range of x up to similar to 80%, were grown by low pressure metalorganic chemical vapor deposition (MOCVD) and studied by a variety of nuclear science and optical analytical techniques, including Rutherford Backscattering Spectrometry (RBS), Raman scattering, photoluminescence (PL), Photoreflectance (PR) and FTIR. Temperature dependent PL-PR measurements over 10-300 K presented the band gap of these InAlGaP materials and variations with composition x and temperature (T). RBS was used to measure the microstructure of AlInGaP films, and through simulation, determine the film thickness and composition precisely. RBS measurement and simulation results indicate a quite fuzzy in the two interfaces, i.e. that there exists diffusion in the majority samples, especially between the AlInGaP layer and substrate. For a certain number of incoming He+ions, we have proposed a way to determine the error bar by RBS successful. For this series of samples, the error bar of content is around +/- 1.5%. The error bar of thickness is around +/- 5.0nm. Different InAlGaP films with different composition and thickness may present different error bars. The results illuminate that RBS is a precise tool to analysis the microstructure of quaternary semiconductor AlInGaP/GaAs samples.

Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

Study Of Ultraviolet Emission Enhancement In Alxinyga1-X-Yn Quaternary Alloy Film

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Indium Mole Fraction Effect on the Structural and Optical Properties of Quaternary Alingan Epilayers

Indium Incorporation Effects on Luminescence Mechanisms in Quaternary AlInGaN Layers

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Investigation of Indium Surface Segregation in InxGa1-xN Films

Indium Compositional Homogeneity in In$_{0.17}$Al$_{0.83}$N Epilayers Grown by Metal Organic Chemical Vapor Deposition

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Growth and Characterization of Quaternary AlInGaN Multiple Quantum Wells with Different Aluminum Composition

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Molecular-Beam Epitaxy of Alinn: an Effect of Source Flux and Temperature on Indium Atom Incorporation in Alloys

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Optical and Spatial Resolved Cathodoluminescence Study of Phase Separation in Green InGaN Sandwiched Structure Grown on GaN Nanorods by MOCVD

Probing the Homogeneity of an In-rich InGaN Layer by Nanoscale Cathodoluminescence (conference Presentation)