Abstract:Abstract In this study, the high-density SiC/SiO 2 core–shell nanowires were synthesized on the nickel coated SiO 2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO 2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO 2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO 2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO 2 nanowires.

A novel approach for the synthesis of 6H-SiC at a low temperature of 460°C

Low temperature synthesis and photoluminescence of cubic silicon carbide

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Silicon nano-wires grown at low temperature

Growth Of Sic Nanorods At Low Temperature

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Synthesis of nanocrystalline silicon carbide powders

Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder

Low-Temperature Solvothermal Route To 2h-Sic Nanoflakes

Low-temperature pseudomorphic transformation of ordered hierarchical macro-mesoporous SiO2/C nanocomposite to SiC via magnesiothermic reduction.

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

A Simple Route to Nanocrystalline Silicon Carbide

In-situ synthesis of nano SiC particles in Al–Si–C system at 750 °C

Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

A New Rapid Reduction−Carbonization Route to Nanocrystalline Β-Sic

Low Temperature Synthesis of Mesoporous Silicon Carbide Via Magnesiothermic Reduction

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Selective Synthesis Of 3c-Sic Hollow Nanospheres And Nanowires

Continuous Synthesis and Characterization of Silicon Carbide Nanorods

The Formation and Crystal Structure of Silicon Carbide

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature