Abstract:Herein, the surface passivation quality of p-type boron-doped Czochralski silicon (Cz-Si) wafers with passivated emitter and rear cell (PERC) structure during 200 degrees C dark annealing is investigated. During such a treatment, a reduction in the saturation current density (J (0)) along with the degradation and regeneration of minority carrier lifetime can only be observed in PERC-structured wafers that fast fired at high temperatures instead of in unfired wafers, which is possibly correlated with hydrogen injected into the silicon bulk during fast firing. Besides, no notable variations in J (0) can be observed in fast-fired SiN x /n + /p-Si/n + /SiN x symmetrical structure wafers during the same treatment, although their minority carrier lifetime undergoes degradation and regeneration cycles, demonstrating that the improved surface passivation comes from the rear surface of PERC structure. The capacitance-voltage measurement on the fabricated rear surface samples with metal-insulator-semiconductor (MIS) structure further demonstrates that the improved surface passivation is not related to field-effect passivation. By comparing the surface state density of rear surface during dark annealing, it can be concluded that the improved rear surface passivation originates from the hydrogenation of surface defects such as dangling bonds, possibly by the outdiffused hydrogen from silicon bulk during such a treatment.

Bipolar structure of carrier concentration in hydrogen pre-annealing Czochralski silicon wafer

Formation of Pnp Bipolar Structure by Thermal Donors in Nitrogen-Containing P-Type Czochralski Silicon Wafers

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

On Conductivity Type Conversion of P-Type Silicon Exposed to a Low-Frequency Inductively Coupled Plasma of Ar + H2

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Denuded Zone in Czochralski Silicon Wafer with High Carbon Content

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Thermal Warpage of Czochralski Silicon Wafers Grown under A Nitrogen Ambience

Improved Surface Passivation of Rear SiN x /AlO x Stacks in p-Type Boron-Doped Czochralski Silicon Wafers During Dark Annealing at Elevated Temperatures

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films