Abstract:Carbon nanotube field-effect transistors (CNTFETs) have been considered a strong candidate for post-Si era electronics due to the virtues of higher speed, lower power consumption, and multiple functionalities. The interface analysis based on the top gate structure has made little progress and lacks a reliable charge trap characterization model suitable for carbon tube devices. Quantitative extraction and analysis of the interface state are crucial for the integration of top-gate devices. Herein, a 5 nm thick Y2O3 thin film was selected as the gate dielectric layer in the top-gate CNTFETs device, and a post-annealing process in air ambience was utilized to optimize the Y2O3-CNT interface. A series of device performance evaluation results indicated that the post-annealing process in air ambience can effectively improve the on-state current and reduce the threshold voltage and subthreshold swing of the device, which are derived from diffusion of oxygen atom in the Y2O3 layer and optimization of the interface of Y2O3-CNT. Specifically, the maximum mobility, subthreshold swing, and threshold voltage are calculated to be 29 cm2/V s, 103 mV/dec, and −0.1 V, respectively, and the interface state density is reduced from 2.68 × 1012 to 1.51 × 1012 cm−2 in the gate insulator. These results not only are important to understand the dielectric impact on CNTFET devices but also are useful for future materials’ development and device optimization for high-performance CNT-based electronics.

Current Instability of Carbon Nanotube Field Effect Transistors.

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Reliability Tests and Improvements for Sc-Contacted N-Type Carbon Nanotube Transistors

Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress

Carbon Nanotube Network Film-Based Field-Effect Transistor Interface State Optimization by Ambient Air Annealing

Influence of Triton X-100 on the characteristics of carbon nanotube field-effect transistors

Pull-in Instability of Carbon Nanotube-Reinforced Nano-Switches Considering Scale, Surface and Thermal Effects

Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors

Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Interpretation of Coulomb Oscillations in Carbon-Nanotube-based Field-Effect Transistors

Carbon Nanotube Field Effect Transistors Based on Schottky Contact

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Aligned carbon nanotube field effect transistors by repeated compression-expansion cycles in Langmuir-Blodgett

Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors