Abstract:We perform a comparative study (both for device and circuit simulations) of three carbon nanotube tunneling field-effect transistor (CNT-TFET) designs: high-K gate dielectric TFETs (HK-TFETs), hetero gate dielectric TFETs (HTFETs) and a novel CNT-TFET-based combination of light doping and hetero gate dielectric TFETs (LD-HTFETs). At device level, the effects of channel and gate dielectric engineering on the switching and high-frequency characteristics for CNT-TFET have been theoretically investigated using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions solved self-consistently with Poisson's equations. It is revealed that the proposed LD-HTFET structure can significantly reduce leakage current, enhance control ability of the gate on the channel, improve the switching speed, and is more suitable for use in low-power, high-frequency circuits. At circuit level, using HSPICE with look-up table-based Verilog-A models, the performance and reliability of CNT-TFET logic gate circuits is evaluated on the basis of power consumption, average delay, stability, energy consumption and power-delay product (PDP). Simulation results indicate that, compared to a traditional CNT-TFET-based circuit, the one based on LD-HTFET has a significantly better performance (static noise margin, energy, delay, PDP). It is also observed that our proposed design exhibits better robustness under different operational conditions by considering power supply voltage and temperature variations. Our results may be useful for designing and optimizing CNTFET devices and circuits.

Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Hooge'S Constant For Carbon Nanotube Field Effect Transistors

Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Current Instability of Carbon Nanotube Field Effect Transistors.

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Carbon nanotube-based CMOS transistors and integrated circuits

Electrostatic Engineering of Nanotube Transistors for Improved Performance

Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors.

Carbon Nanotube Electronics: Recent Advances