Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Excimer Laser Ablation of (001) Textured Zno Waveguiding Films on Fused Silica

Pulsed Laser Reactive Ablation of (0001)-Textured ZnO Optical Waveguiding Films on Α-Sio2

Preparation of C-Axis Oriented ZnO Optical Waveguiding Films on Fused Silica by Pulsed Laser Reactive Ablation

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Cubic Phase MgxZn1−xO Thin Films for Optical Waveguides

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Growth of LiNbO3 Optical Waveguide Films by Excimer Laser Ablation

Pulsed Laser Deposition of Films on Fused Silica in Waveguide Form

Epitaxial Growth Of Zno Films On (100) And (001) Gamma-Lialo2 Substrates By Pulsed Laser Deposition

Excimer Laser Ablating Preparation of Ba 2 NaNb 5 O 15 Thin Films on KTiOPO 4 Substrate and Its Guide Wave Property

(012) Textured LiNbO3 Waveguiding Films Grown on SiO2 by Pulsed Laser Deposition Technique

Pulsed-Laser Deposition and Optical Properties of Completely (001) Textured Optical Waveguiding Linbo3 Films Upon Sio2/Si Substrates

Nb-Doped Zno Transparent Conducting Films Fabricated by Pulsed Laser Deposition

Excimer Laser Ablating Preparation of Ba2NaNb5O15 Optical Waveguiding Films on (001) KTiOP04 Substrates

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

Influences of Substrate and Annealing on the Structural and Optical Properties and Photoluminescence of Nanocrystalline Zno Films Prepared by Plasma Assisted Pulsed Laser Deposition

Infrared And Raman Spectroscopic Studies Of Optically Transparent Zirconia (Zro2) Films Deposited By Plasma-Assisted Reactive Pulsed Laser Deposition