Abstract:We report the effect of metal-insulator transition on electrical transport properties in manganite-based p-i-n heterojunctions, consisting of p-type La0.67Sr0.33MnO3-delta/Pr-0.7 Ca0.3MnO3-delta and n-type Si with a buffer layer of SiO2. As the temperature is higher than the metal-insulator transition temperature T-MI of manganite films, the current-voltage relation of these p-i-n junctions shows good forward rectifying behaviour. Once the temperature is below T-MI, the La0.67Sr0.33MnO3-delta/SiO2/Si p-i-n junction behaves like a backward diode. This backward diode-like behaviour in p-i-n junctions based on manganite can be understood by the change in electronic band structure of manganite films with temperature. We also found that the electric current in these p-i-n junctions is dominated by the tunnelling process at higher bias voltages and the space-charge-limited current process at lower bias voltages in these heterojunctions. This work reveals the various properties and the key role of metal-insulator transition in manganite based diodes.

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