3-D Thermal-electronic Coupled Modeling of Microwave Band Power Transistor with Polysilicon Emitter Structure

HUANG Wei,HU Nan-zhong,LI Hai-ou
DOI: https://doi.org/10.3969/j.issn.1681-1070.2011.07.005
2011-01-01
Abstract:A novel 3-D thermal-electronic coupled modeling is firstly put forward for fabricated bipolar microwave band power transistor with double layer polysilicon emitter structure.Based on the modeling,3-D temperature distribution of the power device which is steady-state biased is numerically simulated.The results of simulation show that the device with multiple cells has lower average temperature compared with the device with single cell due to poor thermal conductivity for oxide refiller into deep trench.Hence the technique can improve the reliability of microwave bipolar transistor.
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