Abstract:Effect of radiation defects on the photoconductivity transients and photoluminescence (PL) spectra have been examined in semi-insulating GaN epitaxial layers grown on bulk n-GaN∕sapphire substrates. Manifestation of defects induced by 10keV x-ray irradiation with the dose of 600Mrad and 100keV neutrons with the fluence of 5×1014cm−2 have been revealed through steady-state and pulsed PL as well as through contact photoconductivity and microwave absorption transients. Synchronous decrease of the PL intensity of yellow, blue, and ultraviolet bands peaked at 2.19, 2.85, and 3.42eV, respectively, with density of radiation-induced defects is observed. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime, which is due to excess-carrier multi-trapping. The decay fits the stretched exponent approximation exp[−(t∕τ)α] with the different factors α in as-grown material (α≈0.7) and irradiated samples (α≈0.3).

Multiphoton Photoluminescence from GaN with Tunable Picosecond Pulses

Two-photon Photoluminescence and Excitation Spectra of InGaN∕GaN Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Photoluminescence from Vacancy‐containing Defects in GaN

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Measurement and analysis of photoluminescence in GaN

Optical Properties and Exciton Localization in Ganas/Gaas

Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

Optical Study of Electronic States in Gaasn

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Optical Pumping Of Iv-Vi Semiconductor Multiple Quantum Well Materials Using A Gasb-Based Laser With Emission At Lambda=2.5 Mu M

Two-Photon Excited Photoluminescence in Ingan Multi-Quantum-Wells Structures

Photoluminescence Related to the Two Dimensional Electron Gas in Modulation-Doped Al_x Ga_(1-x)N/GaN Heterostructures

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Investigation of photoluminescence excitation spectra from GaN films grown by low-pressure MOVPE

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells