Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

Dose-Energy Match for the Formation of High-Integrity Buried Oxide Layers in Low-Dose Separation-By-Implantation-Of-Oxygen Materials

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Energy Dependence of Low Dose SIMOX Wafers

Formation of Silicon on Insulator Using Separation by Implantation of Oxygen with Water Plasma

Effect of Implantation Energy on the Microstructure Evolution of Low Dose Separation of Implanted Oxygen Wafers

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Computer Simulation for the Formation of the Insulator Layer of Silicon-On-Insulator Devices by N+ and O+ Co-Implantation

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Influence of implantation conditions on quality of SIMOX materials

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Preparation of SiOC Composite Material Using High-Energy Heavy Ion Irradiation

Effects of Buried Oxide Layer on Indium Diffusion in Separation by Implantation of Oxygen

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

TEM analysis of SIMOX materials

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Ultra-thin-film silicon-on-insulator structure fabricated by using oxidizing porous silicon technology

Novel SOI technology - H+ implantation, bonding and separation