Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement

Understand NBTI Mechanism by Developing Novel Measurement Techniques

One Method for Fast Gate Oxide TDDB Lifetime Prediction

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Difference Analysis Method for Negative Bias Temperature Instability Lifetime Prediction in Deeply Scaled Pmosfets

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Localized Thermal Effect Enhanced NBTI in Multifin Pfinfets under Low Drain Bias

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Bias Temperature Instability Model Using Dynamic Defect Potential for Predicting CMOS Aging

Statistical Observations of Three Co-Existing NBTI Behaviors in 28 Nm HKMG by On-Chip Monitor with Less Recovery Impact.

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Universal framework for temperature dependence prediction of the negative bias temperature instability based on microscope pictures

Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification

NBTI-related issues in deep submicron pMOSFETs

A Methodology For Short Term And Long Term Nbti Prediction Under Any Bias Conditions

Impact of negative bias temperature instability on single event transients in scaled logic circuits

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

Novel Critical Gate-Based Circuit Path-Level NBTI-Aware Aging Circuit Degradation Prediction.

Assessment of BTI‐induced deterioration in vacuum based undoped structure