Abstract:Binary data in 1T1C or 2T2C non-volatile ferroelectric random access memories, which are represented by the polarization charges of switching and non-switching events, are retrieved when a reading current pulse exceeds the sense amplifier threshold for discrimination of nonswitching pulses, and a reset pulse is required after the destructive readout. Downscaling the dimensions of such memory cells reduces the measurable polarization charge proportional to the capacitor area, and data are no longer detected reliably in high-density memories. The nondestructive readout of the binary information is possible from the high- and low-conductance bipolar switching of a ferroelectric diode under two opposite poling fields, where the direction of the diode effect switches with polarization reversal. Our study of BiFeO3 thin-film capacitors shows measured polarization-modulated diode currents for encoding information within high-density memories. We used two in-plane nano-electrodes fabricated on the film surface in gaps of a few tens of nanometers. As an in-plane field is applied antiparallel to the domain orientation above a coercive field, the partial domains near the film surface layer are switched firstly to form conductive charged walls with respect to the underlying unswitched bulk matrix, so that we can observed an "on" current from current-voltage loops. As the switching field is high enough, the underlying domains throughout the whole film thickness are switched. In this case, there was no charged domain wall, and thus, we observed an "off' current. Both "on" and "off' currents with the ratio of 100 are stable over laboratory time with write cycles larger than 2x10(5) and write time as short as 10 ns, which provide the proof of ferro-resistive switching and independent adjustments of ferroelectricity and conductivity in a single-phase ferroelectric in promotion of the integration density of the memory with high performance.

A New High-Reliable 2t/1c Feram Cell

Improved Memory Density and Endurance by a Novel 1T3C FeFET for BEOL Multi-level Cell Memory

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

A ferroelectric fin diode for robust non-volatile memory

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

High-Desity Nonvolatile Ferroelectric Resisitive Memory

Organic Nonvolatile 2T Memory Cell Employing a NOT‐Gate‐Like Architecture Toward Binary Output Level With Enhanced Noise Tolerance

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

The reliability of FeRAMS with 2T/2C or 1T/1C type cell structure

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Nonvolatile Memory Design Based on Ferroelectric FETs.

A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme with Disturb-Free Inference and High Endurance

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

Ferroelectric materials for 64 Mb and 256 Mb DRAMs

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

A Silicon-Based Ferroelectric Capacitor for Memory Devices