Abstract:The nanocrystalline(nc) Ge embedded in SiO2 matrix was attempted to synthesize from thermal oxidation of PECVD deposited ａ-GexSi1-x∶H films.The microstructures of the samples were detected by Fourier transform infrared spectroscopy,Raman spectroscopy and XRD.The results reveal that Ge nanocrystals form during oxidation and their numbers and sizes are varied with different Ge content in the as deposited ａ-GexSi1-x∶H alloy and also changed upon different-oxidation conditions.These characteristics may be due to the selective oxidation of Si in ａ-GexSi1-x∶H alloy and the reduction of hydrogen existing in the samples in view of chemical thermodynamic equilibrium. Some nc-Si samples display visible photoluminescence(PL) at room temperature.Based on Brus, exiton three-dimensional quantum confinement model,the nc-Ge size was evaluated from the PL peak positions and show a good agreement with the result of XRD.All the above analyses suggest that nc-Ge buried in SiO2 matrix can be obtained by the present method and its visible photoluminescence is related to the effect of quantum size on nc-Ge.The observation of nc-Ge with TEM is required to further confirm these facts.

Synthesis of Ge nanocrystals in thermal SiO2 films by Ge+ ion implantation

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Semiconductor Nanocrystals Formed in SiO2 by Ion Implantation

Growth of Embedded Ge Nanocrystals on Different Substrates

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

The Recrystallization Properties of Poly-Ge<sub>x</sub>Si<sub>1-x</sub>ON SiO<sub>2</sub>/Si

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

The Recrystallization Properties of Poly-Ge x Si 1-x ON SiO 2 /Si

A New Approach for Synthesizing Ge Quantum Crystallites Embedded in A Sin(X) Films

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Recrystallization properties of polycrystalline GeSi on SiO2

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction