Abstract:Unintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.

Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

Persistent Photoconductivity in N-Type Undoped High-Resistivity GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Study of Transient Photoconductivity of Gan Epilayer Grown by Metalorganic Chemical Vapor Deposition

Optical property studies of GaN films grown by MOCVD

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Persistent Photoconductivity and Recombination Mechanism Studies on Unintentionally Doped GaN Grown by MOCVD

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

Optical Properties and Exciton Localization in Ganas/Gaas

Abnormal Photoabsorption in High Resistance Gan Epilayer

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Cathodoluminescence study of GaN-based film structures

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Persistent Photo-Conductivities from Extended Defects in GaN Films with High Resistivity