Abstract:With the sub-bandgap optical excitation, thermal dynamics of holes among multiple levels in n-type GaN epilayers with different dopants of Si, Ge and C are investigated via measuring and modeling variable-temperature yellow luminescence (YL) band of the samples. In sharp contrast to the case of above-bandgap optical excitation, the variable-temperature YL band of all the studied GaN samples including unintentionally-doped sample exhibit unusual negative thermal quenching (NTQ) behavior, suggesting a possible physical mechanism, namely thermally induced migration of holes from shallower levels to the luminescent deep level. By considering the possible presence of multiple hole levels in the doped GaN samples, a phenomenological model is developed for the thermal transfer of holes among the multi-levels and the interpretation of the observed NTQ phenomenon of the YL band. Different activation energies of 347.9, 520.8 and 348.5 meV are obtained for the Ge-doped, high C-containing, and Si-doped GaN samples, respectively. The results reveal the existence of multiple hole defect levels in the n-type GaN. Possible microstructural origins causing these different hole levels are further argued. The study may shed some light on the nature of various defect complexes in the technologically important GaN epilayers. Combined microstructural and optical investigations need to be further done for elucidating various optically- and electrically-active defect complexes in GaN.

Persistent Photoconductivity in N-Type Undoped High-Resistivity GaN

Persistent Photoconductivity and Recombination Mechanism Studies on Unintentionally Doped GaN Grown by MOCVD

Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Study of Transient Photoconductivity of Gan Epilayer Grown by Metalorganic Chemical Vapor Deposition

The Movement of the Fermi Level in Heavily C Doped GaN

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Transient Photoconductivity of GaN Thin Film on Sapphire Substrate

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Persistent Photoconductivity and Carrier Transport in AlGaN∕GaN Heterostructures Treated by Fluorine Plasma

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Annealing of GaN-InGaN Multi Quantum Wells: Correlation between the Bandgap and Yellow Photoluminescence

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Photoluminescence from Vacancy‐containing Defects in GaN