Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Persistent Photo-Conductivities from Extended Defects in GaN Films with High Resistivity

Persistent Photoconductivity and Recombination Mechanism Studies on Unintentionally Doped GaN Grown by MOCVD

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Study of Transient Photoconductivity of Gan Epilayer Grown by Metalorganic Chemical Vapor Deposition

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Persistent Photoconductivity and Carrier Transport in AlGaN∕GaN Heterostructures Treated by Fluorine Plasma

Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Transient Photoconductivity of GaN Thin Film on Sapphire Substrate

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods

The Movement of the Fermi Level in Heavily C Doped GaN

Tuning the Charge States in InAs/GaSb or InAs/GaInSb Composite Quantum Wells by Persistent Photoconductivity

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Characterization of Fluorine‐plasma‐induced Deep Centers in AlGaN/GaN Heterostructure by Persistent Photoconductivity

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Atomic-scale visualization of defect-induced localized vibrations in GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Infrared studies of GaN1-xPx ternary alloys