Tuning the Charge States in InAs/GaSb or InAs/GaInSb Composite Quantum Wells by Persistent Photoconductivity

Bingbing Tong,Zhongdong Han,Tingxin Li,Chi Zhang,Gerard Sullivan,Rui-Rui Du
DOI: https://doi.org/10.1063/1.4993894
2018-01-01
Abstract:We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers with light-emitting diode (LED) illuminations. The persistent photoconductivity could be negative or positive, depending on the specific doping structure and the illuminating photon energy. Compared to the widely-used electro-statically gating method, our findings provide a more flexible and non-invasive way to control the band structures and charge states in InAs/GaSb and InAs/GaInSb quantum wells (QWs).
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