Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Low-temperature PECVD of Nanodevice-Grade Nc-3C-sic

Sic Nanocrystals: High-Rate Deposition and Nano-Scale Control by Thermal Plasma

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Investigation of PECVD SiC nano film

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Processing and Characterisation of PECVD Silicon Nitride Films

Advanced PECVD Processes for SiNW Based Solar Cells and Thin Film Transistors

Room-temperature deposition of low H-content SiNx/SiNxOy thin films using a specially designed PECVD system

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

High quality and wafer-scale cubic silicon carbide single crystals

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Synthesis of Silicon Carbide Nanowires by Solid Phase Source Chemical Vapor Deposition

Low-temperature low-power PECVD synthesis of vertically aligned graphene

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Application of PECVD SiC in glass micromachining