Optimization of PSOI LDMOSFET Structure

CHENG Xin-hong,SONG Zhao-rui,YU Yue-hui,JIANG Li-juan,XU Zhong-de

DOI: https://doi.org/10.3969/j.issn.1003-353X.2006.06.012

2006-01-01

Abstract:The optimization of PSOI LDMOSFET structure was achieved through numerical analysis. There existed optimal drift length, doping concentration,and top silicon thickness mak- ing the structure have high off-breakdown voltage and low on-resistance. The RESURF rule for PSOI structure was Nd·tsi=1.8～3×1012cm-2. The output characteristics of the optimized PSOI structure were also analyzed. No kink effect or negative conductivity effect were shown, and the device tem- perature decreased about 50℃. The structure optimization was a good way to improve the perfor- mance of the device and decrease the fabrication costs.