Abstract:We have used a variety of laser wavelengths (365, 473, 633, 685, 730 nm) to produced porous silicon thin films by photochemically etching n-type Si in 48% HF in aqueous solution. Photoluminescence (PL) has been excited either with 365 or 473 nm light. We have observed the PL spectrum as a function of fabrication wavelength (λfab) and of exposure to the PL excitation laser. We demonstrate that the in situ peak PL emission wavelength (λpeak) depends on the fabrication laser wavelength for λfab≥473 nm and that the redder the λfab, the redder λpeak. For λfab≤473 nm we find λpeak≈550 nm. We have also found that post-growth exposure of a film to 365 or 473 nm light rapidly (on the order of 10 s) and continuously shifts λpeak to a saturation value of 530–550 nm where a steady state is reached. In addition, we have made simultaneous observations of the PL spectrum while a film is grown with λfab=365 or 473 nm. Detectable PL is first observed after ∼100 s. The peak then grows in intensity until a steady value is achieved. λpeak is found to vary little as the peak intensity grows. The observation that redder λfab leads to redder λpeak is consistent with the predictions of quantum confinement for fully hydrogen-terminated porous Si. When exposed to air, λpeak=670–700 nm irrespective of λfab. The latter result suggests that chemisorbed oxygen is important in determining λpeak of air-exposed films.

Ultraviolet light emission from porous silicon hydrothermally prepared

Intense 310 Am Ultraviolet Emission from Porous Silicon Prepared by Hydrothermal Etching

Ultraviolet light emission from porous silicon with its peak wavelength around 370 nm.

Ultraviolet light emission from oxidized porous silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Photoluminescence in porous silicon obtained by hydrothermal etching

The Influence of Microstructure on Optical Properties of Porous Silicon

Photoluminescence of oxidized porous silicon under UV-light illumination

In situ photoluminescence studies of photochemically grown porous silicon

Temperature-dependent Photoluminescence Properties of Porous Silicon Nanowire Arrays

Strong and Stable Ultraviolet Luminescence in Porous Silicon in Situ Passivated by Manganese

Annealing and amorphous silicon passivation of porous silicon with blue light emission

Photoluminescence Origins of the Porous Silicon Nanowire Arrays

A Comparative Study of Ultraviolet Emission with Peak Wavelengths Around 350 Nm from Oxidized Porous Silicon and That from SiO2 Powder

Material synthesis: Microstructure and light emitting in porous silicon derived from hydrothermal etching

Intense And Stable Blue-Violet Emission From Porous Silicon Modified With Alkyls

Effect of post-treatment processes on the photoluminescence of porous silicon

Effect of annealing on photoluminescence of passivated porous silicon

Double-peak-structured photoluminescence mechanisms of porous silicon

Two-peak Photoluminescence and Light-Emitting Mechanism of Porous Silicon

Blue-Light Emission from Porous Silicon