Abstract:We have used a variety of laser wavelengths (365, 473, 633, 685, 730 nm) to produced porous silicon thin films by photochemically etching n-type Si in 48% HF in aqueous solution. Photoluminescence (PL) has been excited either with 365 or 473 nm light. We have observed the PL spectrum as a function of fabrication wavelength (λfab) and of exposure to the PL excitation laser. We demonstrate that the in situ peak PL emission wavelength (λpeak) depends on the fabrication laser wavelength for λfab≥473 nm and that the redder the λfab, the redder λpeak. For λfab≤473 nm we find λpeak≈550 nm. We have also found that post-growth exposure of a film to 365 or 473 nm light rapidly (on the order of 10 s) and continuously shifts λpeak to a saturation value of 530–550 nm where a steady state is reached. In addition, we have made simultaneous observations of the PL spectrum while a film is grown with λfab=365 or 473 nm. Detectable PL is first observed after ∼100 s. The peak then grows in intensity until a steady value is achieved. λpeak is found to vary little as the peak intensity grows. The observation that redder λfab leads to redder λpeak is consistent with the predictions of quantum confinement for fully hydrogen-terminated porous Si. When exposed to air, λpeak=670–700 nm irrespective of λfab. The latter result suggests that chemisorbed oxygen is important in determining λpeak of air-exposed films.

Ultraviolet light emission from porous silicon with its peak wavelength around 370 nm.

Ultraviolet light emission from oxidized porous silicon

A Comparative Study of Ultraviolet Emission with Peak Wavelengths Around 350 Nm from Oxidized Porous Silicon and That from SiO2 Powder

Ultraviolet light emission from porous silicon hydrothermally prepared

Photoluminescence of oxidized porous silicon under UV-light illumination

Intense 310 Am Ultraviolet Emission from Porous Silicon Prepared by Hydrothermal Etching

Strong Ultraviolet Photoluminescence From Silicon Oxide Films Prepared By Magnetron Sputtering

Photoluminescence Peak Energy Evolution for Porous Silicon During Photo-Oxidation and Gamma -Ray Oxidation

Stable and Intense Blue-Green Emission in Porous Silicon Achieved by Amine Immersion and Rapid Thermal Oxidation

Stable Blue Light Emission from Oxidized Porous Silicon

Microsecond Photoluminescence Decay and Oxidation of Porous Silicon

Origin of Multiple-Peak Photoluminescence Spectra of Light-Emitting Porous Silicon

Blue-Light Emission from Porous Silicon

Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Variation of double-peak structure of photoluminescence spectra with excitation wavelength for porous silicon and luminescence mechanism

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Influence of Microstructure on Optical Properties of Porous Silicon

In situ photoluminescence studies of photochemically grown porous silicon

Annealing and amorphous silicon passivation of porous silicon with blue light emission

The photoluminescence spectra shift of porous silicon by spontaneous oxidation

Photoluminescence Mechanism For Blue-Light-Emitting Porous Silicon