Abstract:Chalcogenide alloys in pseudobinary line between Sb2Te3 and GeTe are extensively utilied in phase change memories for optical and electronic contrast between crystalline and amorphous phases. Different from the crystalline structure, the understanding of amorphous structures is still insufficient due to disorder and distortion. By employing first-principle molecular dynamics simulations and atomistic cluster alignment analysis, the short-range orders and the associated distortions of amorphous Sb2Te3, Ge1Sb2Te4, Ge2Sb2Te5, Ge3Sb2Te6 and GeTe are investigated to explore the origin of nature difference. The results reveal that GeGe and SbSb bonds present a notable competitive mechanism with GeTe content. The GeTe content has a great influence on Ge- and Te-centered short-range orders but little influence on the structures of Sb-centered clusters, especially for the octahedral sites and unidentified structures. The tetrahedrons in Ge-centered clusters of each alloy show a close proportion, but the fraction of tetrahedrons in total clusters increases with the increasing GeTe content due to the increase in the ratio of Ge atom. As for the distortions of clusters, the distorted tetrahedrons in Ge2Sb2Te5 are closest to the standard tetrahedron, the Peierls distortion of Ge-centered 6-fold octahedron reduces with an increase in GeTe content whereas that of Sb-centered 6-fold octahedron shows a little change. Additionally, it is found that GeTe content can inhibit the formation of nanocavity but contribute to the formation of the odd rings. Our findings deepens the understanding of amorphous structures, which can promote the design and application of phase-change materials.

Investigation on Ge<sub>5−<i>x</i></sub>Sb<sub><i>x</i></sub>Te<sub>5</sub> phase-change materials by first-principles method

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Phase Change Behaviors of In-Ge-Sb-Te Alloy

The local structural differences in amorphous Ge-Sb-Te alloys

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Microstructures and Thermoelectric Properties of GeSbTe Based Layered Compounds

Band Offsets Between Sio2 And Phase Change Materials In The (Gete)(X)(Sb2te3)(1-X) Pseudobinary System

Comparison of Thermal Stability and Electrical Characterization Between Ge2sb2te5 and Ge1sb2te4 Phase-Change Materials

A Study on Inorganic Phase-Change Resist Ge2Sb2(1-x)Bi2xTe5 and Its Mechanism.

Direct observation of structural transitions in the phase change material Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

High-throughput computational screening of Sb–Te binary alloys for phase-change storage applications

A Revision of the Sb-Te Binary Phase Diagram and Crystal Structure of the Modulated γ-Phase Field

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory