Abstract:Zinc oxide (ZnO) has attracted lots of attention to be used as interfacial materials in organic optoelectronic devices owing to its attractive properties. In this work, a series of transition-metal-doped ZnO thin films were prepared by using a facile aqueous solution process, thereafter these films were employed as electron injection layers (EILs) combined with the tris-(8-hydroxyquinoline) aluminum (Alq 3 ) emitting layer to construct the inverted organic light-emitting diodes (IOLEDs). The transition-metal-doped ZnO EIL-based IOLEDs demonstrate markedly improved device performance compared to the reference neat ZnO EIL-based IOLED. However, different transition-metal ions have much different doping effect on the device performance. CoCl 2 doped ZnO EIL based IOLED device possesss an optimal current efficiency of 5.52 cd A -1 , which is increased about 40% compared to the device with the neat ZnO as EIL. The enhancement might be attributed to the increased electron mobility and favorable interfacial energy level alignment of the transition-metal doped ZnO EIL for more efficient electron injection. Our findings may provide a promising strategy to improve the electron injection properties of ZnO film in the OLED devices.

Efficient Organic Light-Emitting Diodes with Zinc Acetate As an Effective Electron Injection Layer

Novel Solution-Processed ZnO-Based Electron Injection Layer for Organic Light-Emitting Diodes

Enhanced Brightness and Efficiency in Organic Light-Emitting Devices Using an Lif-Doped Electron-Injecting Layer with Aluminium Cathode

Enhancement of Electron Injection in Organic Light-Emitting Devices Using an Ag/LiF Cathode

Efficient Organic Light-Emitting Diode Using Lithium Tetra(8-Hydroxy-Quinolinato) Boron As the Electron Injection Layer

Efficient Single-Active-Layer Organic Light-Emitting Diodes With Fluoropolymer Buffer Layers

Enhanced Electron Injection Efficiency and Electroluminescence in Organic Light-Emitting Diodes by Using an Sn/Al Cathode

Electron injection and electroluminescence investigation of organic light-emitting devices based on a Sn/Al cathode

Improved Electron Injection in Organic Light-Emitting Devices with A Lithium Acetylacetonate [li(acac)]/aluminium Bilayer Cathode

Improved performances in top-emitting organic light-emitting diodes based on a semiconductor zinc oxide buffer layer

FABRICATION OF ORGANIC LIGHT-EMITTING DEVICES USING LiF/Al AS CATHODE

Organic light-emitting devices with double-block layer

Aqueous solution processed transition-metal-doped ZnO as electron injection layers for efficient inverted organic light emitting diodes

Organic light-emitting devices with a 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole layer between the α-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum

Significant Performance Enhancement of Inverted Organic Light-Emitting Diodes by Using ZnIx As a Hole-Blocking Layer

Highly efficient and bright organic light-emitting devices using a Sn/Al cathode

Increased Performance of an Organic Light-Emitting Diode by Employing a Zinc Phthalocyanine Based Composite Hole Transport Layer

High performance organic light-emitting diodes with LiCoO2 as an electron injection layer

Effect of Nacl Buffer Layer on the Performance of Organic Light-Emitting Devices (Oleds)

Al2O3 Buffer Layers and Characteristics of Organic Light Emitting Devices Made of Al-Doped ZnO Films

Highly Efficient And Bright Organic Fight-Emitting Devices Using A Sn/Al Cathode