Abstract:Organic light emitting diodes (OLEDs) have gained a remarkable position in display industries, because of its high flexibility and wide color gamut features. A number of OLED structures have been demonstrated in the recent years with an aim to make proficient device. In this paper, an H-shaped single layer OLED design has been proposed. An intensive investigation over various design challenges such as, device potential, current density, luminescent power, electric field, recombination rate and single exciton densities have been analyzed with the help of analytical modeling and a number of mathematical simulations. The complete analyses of H-shaped OLED are performed by utilizing Atlas 2-D TCAD device simulation. The H-shaped structure of the device consists of small distance between anode and cathode in some regions that leads to high potential. Therefore, it directly results in the current density augmentation of the device and hence high performance is achieved. Furthermore, owing to high carrier injection that improves the overall recombination rate significantly and enables high singlet exciton density. Besides this, for fair estimation of H-shaped device performance, investigation at various intentional doping levels is analyzed. Additionally, more depth analysis has been investigated with incorporation of graphene oxide buffer layer. This analysis results in superior luminosity that can be employed for high current and reliable applications.

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