Aqueous solution processed transition-metal-doped ZnO as electron injection layers for efficient inverted organic light emitting diodes

Yaozhao Li,Peng Li,Pengpeng Zhang,Bin Wei,Guo Chen
DOI: https://doi.org/10.1016/j.synthmet.2024.117595
IF: 4
2024-03-23
Synthetic Metals
Abstract:Zinc oxide (ZnO) has attracted lots of attention to be used as interfacial materials in organic optoelectronic devices owing to its attractive properties. In this work, a series of transition-metal-doped ZnO thin films were prepared by using a facile aqueous solution process, thereafter these films were employed as electron injection layers (EILs) combined with the tris-(8-hydroxyquinoline) aluminum (Alq 3 ) emitting layer to construct the inverted organic light-emitting diodes (IOLEDs). The transition-metal-doped ZnO EIL-based IOLEDs demonstrate markedly improved device performance compared to the reference neat ZnO EIL-based IOLED. However, different transition-metal ions have much different doping effect on the device performance. CoCl 2 doped ZnO EIL based IOLED device possesss an optimal current efficiency of 5.52 cd A -1 , which is increased about 40% compared to the device with the neat ZnO as EIL. The enhancement might be attributed to the increased electron mobility and favorable interfacial energy level alignment of the transition-metal doped ZnO EIL for more efficient electron injection. Our findings may provide a promising strategy to improve the electron injection properties of ZnO film in the OLED devices.
materials science, multidisciplinary,physics, condensed matter,polymer science
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