Abstract:Colloidal quantum-dot light-emitting diodes (QLEDs) are rapidly gaining recognition as formidable contenders in the realm of next-generation lighting and display devices. Notwithstanding, the journey to commercialization of QLED devices encounters a roadblock in the form of inadequate flexibility exhibited by the electron transport layer, which is typically made of ZnO nanoparticles. The hindrance stems from the substantial specific surface area, existence of surface defect states, and the fixed ZnO bandgap. To surmount these obstacles, we delved into the potential of integrating Mg element as a dopant in ZnO, aiming to enhance the surface chemistry, electrical characteristics, and film morphology of colloidal ZnO nanoparticles. The results clearly indicated that Mg doping played a critical role in diminishing surface defects in ZnO, while simultaneously reducing the density of oxygen vacancies, thereby regulating its electron mobility. Through modulation of the Mg doping concentration, the bandgap width of ZnO can be fine-tuned, leading to the creation of a more suitable electron transport layer. The inverted QLED devices based on Zn 1− x Mg x O electron transport layers exhibited remarkable advancements, with a peak external quantum efficiency and current efficiency of 6.7% and 29 cd A −1 , respectively. These values surpassed those of reference devices by 35 and 28%, underscoring the efficacy of Zn 1− x Mg x O as a viable approach for enhancing the efficiency of QLED devices.

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Efficient silicon quantum dots light emitting diodes with an inverted device structure

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Efficient inverted organic light-emitting devices using a charge-generation unit as electron-injection layers

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

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Enhanced performance in inverted organic light emitting diode assisted by an interlayer of crystalline and n-doped 1,4,5,8-naphthalene-tetracarboxylic- dianhydride

Novel Solution-Processed ZnO-Based Electron Injection Layer for Organic Light-Emitting Diodes

Performance improvements in all-solution processed inverted QLEDs realized by inserting an electron blocking layer

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Efficient Quantum Dot Light-Emitting Diodes with a Zn0.85Mg0.15O Interfacial Modification Layer.

Photoconductive Cathode Interlayer for Enhanced Electron Injection in Inverted Polymer Light-Emitting Diodes.

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Highly efficient inverted organic light-emitting diodes with organic p-n junction as electron injection layer

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Improved Performance of Inverted Quantum Dots Light Emitting Devices by Introducing Double Hole Transport Layers

Lead(Iv) Dioxide: an Effective Electron Injection Material to Realize High-Efficiency Inverted Top-Emitting Organic Light-Emitting Diodes