The Fatigue Properties in Bi 4 Ti 3 O 12 -Srbi 4 Ti 4 O 15 Thin Film with La-Doped

J. S. Zhu,D. Y. Wang,D. Su,X. M. Lu,H. X. Qin,Z. H. Bao,H. L. W. Chan,K. H. Wang,C. L. Choy
DOI: https://doi.org/10.1080/713718224
2002-01-01
Integrated Ferroelectrics
Abstract:Intergrowth Bi 4 Ti 3 O 12 -SrBi 4 Ti 4 O 15 (BT-SBTi) thin film was fabricated on Pt/TiO 2 /SiO 2 /Si(110) substrates by pulsed laser deposition technique. P r = 12 w C/cm 2 was obtained in the film annealed at 650 C by RTP. The measurement of fatigue behavior shows bad fatigue property. After La-doped, the Bi 3.25 La 0.75 Ti 3 O 12 -SrBi 4 Ti 4 O 15 (BLT-SBTi, P r = 13.5 w C/cm 2 at 250 nm) did not show any significant fatigue up to 10 10 switching cycles above applied field of 250 KV/cm. And also it has good retention properties. The field dependence of fatigue behavior and La-doped effect are discussed.
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