The Fatigue Properties In Bi4ti3o12-Srbi4ti4o15 Thin Film With La-Doped

Js Zhu,Dy Wang,D Su,Xm Lu,Hx Qin,Zh Bao,Hlw Chan,Kh Wang,Cl Choy
DOI: https://doi.org/10.1080/10584580190044100
2002-01-01
Integrated Ferroelectrics
Abstract:Intergrowth Bi4Ti3O12-SrBi4Ti4O15 (BT-SBTi) thin film was fabricated on Pt/TiO2/SiO2/Si(110) substrates by pulsed laser deposition technique. P-r=12muC/cm(2) was obtained in the film annealed at 650degreesC by RTP. The measurement of fatigue behavior shows bad fatigue property. After La-doped, the Bi3.25La0.75Ti3O12-SrBi4Ti4O15 (BLT-SBTi, P-r=13.5 muC/cm(2) at 250 nm) did not show any significant fatigue up to 10(10) switching cycles above applied field of 250 KV/cm. And also it has good retention properties. The field dependence of fatigue behavior and La-doped effect are discussed.
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