Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics Using MgO(100)

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Large and Robust Electrical Spin Injection into GaAs at Zero Magnetic Field Using an Ultrathin CoFeB/MgO Injector

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Spin-Polarized Injection into A P-Type Gaas Layer from A Co2mnal Injector

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs

Spin injection into ferromagnetic Co2MnAl by optical absorption in GaAs

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Electrical spin injection and detection in a semiconductor. Is it feasible?

Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves