Abstract:In this work we focus on the simulation of radiation effects on silicon under proton irradiation at different scales. Two models of the Monte Carlo displacement damage calculation method in the Particle and Heavy Ion Transport code System (PHITS) were first used: the Torrens displacements per atom (NRT-DPA) model and a thermal recombination corrected dpa (arc-DPA), the prediction result of the final arc-DPA model is about 1/3 lower than the traditional NRT-DPA model; we also compared the difference between the two calculated values at the same dose of irradiation. When presenting a molecular dynamics study of the generation and evolution of silicon defects under irradiation, we simulated a 10 keV displacement cascade at room temperature. By post-processing the simulation results, the changes in the distribution and number of defects, as well as the evolution of defect clusters, were analyzed, where both the number of point defects and vacancy clusters show a tendency to increase and then decrease. Finally, first-principles were used to simulate and analyze the energy band structures , DOS, effective mass, the dielectric function, reflection and transmission spectra of silicon after introduction of defects. In order to obtain more accurate value of the bandgap, the HSE06 hybridization generalization is used so that the bandgap is not underestimated, while the clear bandgap facilitates fine analysis of the band structures of the defect states. We found that although the width of the energy band is reduced, which will lead to a increase of intrinsic carrier concentration. At the same time, the effective mass of the electron and hole are greatly reduced, which ultimately leads to a reduction of carrier mobility, and this will finally cause series of performance degradations.

The Effect of Electron Radiation Damage on Transport Properties of A-Si:H

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

4 MeV Electron Irradiation Effect on Electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si Structures

Study of irradiation damage in silicon at different scales

Structural and Luminescent Properties of Electron-Irradiated Silicon

A Study of Electron Irradiation-Induced Defects in Si Layers

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Evolution of secondary defects in arsenic implanted Si

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Damage Effects in 6H-Sic Single Crystals by Si&H Dual Ion Irradiation: A Combined Raman and XRD Study

Effect on Transport Properties of Electrons at Modulation-Doped GaAs/AlGaAs Heterostructure Interface by Neutron Irradiation

Damage Effects of Au&He Dual Ion Irradiated Silicon Carbide

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination

Effect of Thermal Pretreatment on Electron-Irradiation Induced Defects in Hydrogen-Grown Silicon

The Effects of 1 MeV Electron Irradiation on the Current-Voltage Characteristics of Au/p-InP Structures