Abstract:In this article, a novel high robust and latch-up immune electrostatic discharge (ESD) protection device, called gate-controlled low-voltage-triggered silicon-controlled rectifier (GC-LVTSCR), is proposed for 5-V I/O protection applications in the advance 40-nm CMOS technology. By incorporating a surface current diverting path with a controlling poly-silicon gate (CG) into the conventional LVTSCR, the GC-LVTSCR's ESD characteristics can be improved and modulated with two bias conditions of CG. The first improved GC-LVTSCR structure named gate-to-body SCR (GBSCR) with the CG tied to the PWell's body is expected to realize higher holding voltage ( and lower trigger voltage ( , while the other structure named gate-to-drain SCR (GDSCR) using the CG connected to the bridging p+ region of LVTSCR is designed to gain even higher . Measurement results show that the GBSCR has 11% lowered , 38% enhanced , and improved charged device model (CDM) characteristics by comparing with the traditional LVTSCR, and the GDSCR possesses a further improved with 45% higher than the GBSCR. Besides, the new d- vices are expected to protect 5 V or above I/O in submicrometer technologies and have been realized in a 0.18- BCD process.

Application of multilayer chip varistors

Recent Development Trends of Multilayer Chip Varistors

Research progress of multilayer chip ZnO varistors

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Power System ESD Protection Circuit Design in CMOS IC

ESD Protection Issues in IC Design

A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A Modified LDMOS Device with Improved ESD Protection Performance

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Trigger voltage walk-in effect of ESD protection device in HVCMOS

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

An Overview of ESD Protection in Nanometer IC

Power Bus ESD Protection Structure Design in CMOS IC

Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes