Study of Fabrication Process of A Micro-Electrostatic Switch and Its Application to A Micromechanical V-F Converter

XQ SUN,ZJ LI,XY ZHENG,LT LIU
DOI: https://doi.org/10.1016/0924-4247(93)80150-f
1993-01-01
Abstract:This paper describes a novel process based on lateral etching of a sacrificial silicon dioxide layer for fabricating the polysilicon beam structure of an electrostatic microswitch, and discusses the issues relating to undoped and phosphorus-doped polysilicon beams and sacrificial silicon dioxide, as well as the deflections of as-fabricated polysilicon beams. It proposes and realizes the application of this beam switch in a circuit as a voltage(V)-frequency(F) converter. The results of the initial study show that the performance of the converter is promising.
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