Abstract:We report the solid source molecular beam epitaxial growth of InAs/InP quantum dot (QD) superlattices and the effect of As/P exchange on the interface between InAs and InP. The InAs QDs were found to have an average lateral diameter of similar to 40nm and a density of 3-4 x 10(9)cm(-2). The QDs superlattice has photoluminescence (PL) emission centred at 0.77eV with a linewidth of 64meV at low temperature (4K). X-ray diffraction (XRD) spectra showed evidence of significant As/P exchange on the interface between InAs and InP during in situ annealing under Pt pressure before growing the spacer layer of InP. An average P composition of similar to 30% in the resulting InAsP QDs in samples: annealed for 50s was deduced from dynamical simulations of the experimental XRD spectra. The QDs superlattice PL emission exhibits a blueshift following an increase in annealing time, and emission at 1.55 mum and at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelengths. (C) 2001 Elsevier Science B.V. All rights reserved.

Room temperature 1.55 μm emission from InAs quantum dots grown on (0 0 1)InP substrate by molecular beam epitaxy

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

Growth of Self-assembled InAs Quantum Dots Emitting at 1.55Μm

Room Temperature Midinfrared Electroluminescence from InSb/InAs Quantum Dot Light Emitting Diodes

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Photoluminescence of InAs Self-Organized Quantum Dots Formation on InP Substrate by MOCVD

Growth And Emission Tuning Of Inas/Inp Quantum Dots Superlattice

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Room Temperature 1.25 Mu M Emission From High Indium Content Inxga1-Xas/Gaas Quantum Wells Grown By Molecular Beam Epitaxy

1.55Μm InAs Quantum Dots Grown on a GaAs Substrate Using a GaAsSb Metamorphic Buffer Layer

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

GaAs-based Long-Wavelength InAs Bilayer Quantum Dots Grown by Molecular Beam Epitaxy

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Room Temperature Photoluminescence at 4.5μm from InAsN

Room Temperature Continuous-Wave Operation of Inas/Inp (100) Quantum Dot Lasers Grown by Gas-Source Molecular-Beam Epitaxy

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Molecular Beam Epitaxy Growth and Photoluminescence Study of Room Temperature 1.31μm (inyga1−yas/gaas1−x Sbx)/GaAs Bilayer Quantum Wells

Photoluminescence Study of InAlAs Quantum Dots Grown on Differently Oriented Surfaces