Abstract:The direct epitaxial growth of GaAs on Si suffers from their nature of lattice mismatch, thermal mismatch and polarity difference induced anti-phase domains (APDs). Here, we report the high quality and thin GaAs film grown on {113}-faceted Ge/Si (001) hollow substrate by in-situ hybrid molecular beam epitaxy. By directly growth of Ge on U-shape patterned Si (001), a strain-relaxed high-quality Ge sawtooth hollow structure with {113} facets was obtained. With an additional 400 nm GaAs deposition, an APD-free surface with a root-mean-square roughness of merely 0.67 nm is obtained on such Ge {113} /Si (001) substrate. The lattice mismatch dislocation between Ge and Si is found to terminate mostly at the sidewalls of the hollow structures. The {113}-faceted Ge surface is acting as an equivalent to the miscut substrate, which annihilates the APDs at the GaAs/Ge interface. High-resolution X-ray diffraction characterization reveals that the hollow structures can effectively reduce the thermal strain, leading to a crack-free GaAs film up to 7 µm. Five-layer InAs/GaAs quantum dots (QDs) on such virtual GaAs/Ge {113} /Si (001) substrate without any dislocation filter layers exhibits almost the same photoluminescence (PL) intensity as that on the GaAs substrate, providing a promising method for integrating III-V QD lasers with silicon photonic platform.

Growth of Self-assembled InAs Quantum Dots Emitting at 1.55Μm

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers

1.55Μm InAs Quantum Dots Grown on a GaAs Substrate Using a GaAsSb Metamorphic Buffer Layer

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

1.55 Μm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

1.55 Μm Wavelength InAsP/InGaAsP Multiple Quantum Well Laser Based Upon Solid Source Molecular Beam Epitaxy

Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

Directed Self-Assembly of InAs Quantum Dots Using in Situ Interference Lithography

O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates