Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Epitaxial Growth And Polarity Of Zno Films On Sapphire (0001) Substrates By Low-Pressure Metal Organic Chemical Vapor Deposition

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Polarity-Controlled Growth of High-Quality ZnO Epitaxial Films

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Unveiling Interface Structure and Polarity of Wurtzite ZnO Film Epitaxially Grown on A-Plane Sapphire Substrate

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Effects of Growth Temperature and Oxygen Pressure on the Properties of Heteroepitaxial Zno Thin Films on Sapphire (0001) Substrates by Pulsed Laser Deposition

Realization of nonpolar a-plane ZnO films on r-plane sapphire substrates using a simple single-source chemical vapor deposition

Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Growth of Epitaxial C-Plane Zno Film on A-Plane Sapphire by Radio Frequency Reactive Magnetron Sputtering

Optical Properties and Structural Characteristics of Zno Thin Films Grown on A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Structural and Optical Properties of Nonpolar $(11 \bar{2}0)$ ZnO Films Grown by Plasma-Assisted Molecular-Beam Epitaxy

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Growth of P-Type A-Plane Zno Thin Films on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Structural Characterization of Zn-polar ZnO Films Grown on Mg-modified C-Al2o3 (0001) Surface