Abstract:In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (Tg) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the Tg, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the Tg is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, Tg is elevated to near transition temperature (Ttran) to continue AlN single crystal growth at a proper rate for a long time, where Ttran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.

Seeded Growth of AlN on N- and Al-polar AlN Seeds by Physical Vapor Transport

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE

Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method

Surface Control of AlN Single Crystal Growth on SiC Substrate

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

2-inch semi-polar (11̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

High quality non-polar a-plane AlN template grown on semi-polar r-plane sapphire substrate by three-step pulsed flow growth method

Step-flow Growth of Al Droplet Free AlN Epilayers Grown by Plasma Assisted Molecular Beam Epitaxy