Influences of different sputtering current on the microstructure and electrical properties of silicon nitride thin films deposited on cemented carbide tools
Di Zhou,Lei Huang,Juntang Yuan,Chao Li
DOI: https://doi.org/10.1016/j.ceramint.2021.08.108
IF: 5.532
2021-11-01
Ceramics International
Abstract:Silicon nitride (SiNx) thin films, owing to their high hardness and great insulation performance, show a great prospect for application in smart temperature-measurement tools. However, their properties depend on the deposition conditions, and the high temperatures during cutting process affects the insulation function of these films. In the current work, SiNx thin films were prepared on YG8 cemented carbide by middle-frequency magnetron sputtering technology. Stylus profiler, atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscope (SEM), and electrochemical analysis tester were applied to investigate the influence of various sputtering currents on microstructure, chemical composition, and electrical properties of SiNx thin films. The results revealed the amorphous structure of SiNx thin films. The sputtering current showed the impetus effect on the deposition rate and roughness of the films. As the sputtering current increased, the isolated islands, initially formed on the carbide substrates, transformed into the uniform and dense film structure. High sputtering current was conducive to the dissociation of N2 and to the formation of the SiNx phase in the films. Finally, annealing at 500 °C caused the failure of Si-N bonds in the film, which deteriorated the insulation performance of the latter at high temperatures at high temperatures.
materials science, ceramics